| Part Number | Wavelength (nm) | Dia (mm) | Thickness (mm) | Separation Angle | No. of Spots |
|---|---|---|---|---|---|
| DOE-355-1×3 | 355 | 25.4 | 3 | ≤ 5˚ | 1×3 |
| DOE-355-1×5 | 355 | 25.4 | 3 | ≤ 5˚ | 1×5 |
| DOE-355-1×6 | 355 | 25.4 | 3 | ≤ 5˚ | 1×6 |
| DOE-355-1×8 | 355 | 25.4 | 3 | ≤ 5˚ | 1×8 |
| DOE-532-1×3 | 532 | 25.4 | 3 | ≤ 5˚ | 1×3 |
| DOE-532-1×5 | 532 | 25.4 | 3 | ≤ 5˚ | 1×5 |
| DOE-532-1×6 | 532 | 25.4 | 3 | ≤ 5˚ | 1×6 |
| DOE-532-1×8 | 532 | 25.4 | 3 | ≤ 5˚ | 1×8 |
| DOE-1064-1×3 | 1064 | 25.4 | 3 | ≤ 5˚ | 1×3 |
| DOE-1064-1×5 | 1064 | 25.4 | 3 | ≤ 5˚ | 1×5 |
| DOE-1064-1×6 | 1064 | 25.4 | 3 | ≤ 5˚ | 1×6 |
| DOE-1064-1×8 | 1064 | 25.4 | 3 | ≤ 5˚ | 1×8 |
Description
The collimated laser light is incident onto an array (1 x N or M x N) of Beam Splitter DOE to split the input beam into N beams. The N output beams make some separation angle with the Beam Splitter DOE and there exists the desired zero-order beam for an odd number of beams (N). The focusing lenses are often used to achieve the output at the desired working distance.
Specification
Material: Fused Silica
Beam Mode: SM or MM
Separation Angle: ≤ 5°
Transmission Efficiency: ̴ 100%Overall Efficiency ̴ 74- 85%
Uniformity (Contrast): < 1-3%
Zero-Order: relative to the incident beam<0.5-1%
Type: Window
Coating: AR/AR @ 355nm, 532nm, 1064nm
Part Number Wavelength (nm) F-theta EFL (mm) Dimension (mm) Input Beam Dia(mm) Flat Tope Beam Size (µm)
DOE-SCAN-1064-254C 1064 254 16 x 16 x 3 4.5 116
DOE-SCAN-1064-163 1064 163 16 x 16 x 3 5.0 118
DOE-SCAN-532-330 532 330 16 x 16 x 3 3.0 120
Description
This set up comprises a laser source, Beam Shaper DOE, scan system/lens, and a working surface. The light passed through the Beam Shaper DOE distributes the Gaussian beam energy into a uniform intensity of either a circular or rectangular top-hat profile.
Specification
Material: Fused Silica
Beam Mode: SM or TEM ₀₀ with M²<1.5
Transmission Efficiency: ̴ 100%
Overall Efficiency: ̴ 90-95%
Shape: Circular, Rectangular
Type: Window
Coating: AR/AR @ 532nm, 1064nm
